Senior / Lead Process Engineer - GaN Epitaxy (APM), IME
Agency for Science, Technology and Research – Queenstown
We are seeking a talented and passionate Senior / Lead Process Engineer to join our epitaxy team.
You'll play a crucial role in developing cutting-edge platform technologies for high-speed and medium voltage power devices, pushing the boundaries of performance and efficiency.
Responsibilities
Develop innovative GaN-on-SiC HEMT epitaxial processes on an MOCVD system, focusing on recipe development to achieve high carrier mobility, low threading dislocation density, on 6'' / 8'' substrates.
Design experiments to minimize line defects, point defects and extended defect density, with emphasis on enhancing GaN HEMT device performance.
Perform selective GaN regrowth for contact formation.
Conduct metrology and characterization of GaN / AlGaN epilayers (carrier mobility, threading dislocation density, FWHM rocking curve, thickness uniformity, surface roughness, crystal quality, stress).
Prepare technical presentations and papers for internal meetings, conferences and journals.
Collaborate with NSTIC-GaN and related teams to solve key technical challenges in the GaN RF electronics industry.
Publish technical papers and draft technical disclosures / IP.
Contribute ideas towards new funding proposals.
Perform all other reasonable duties as assigned.
Requirements
Master's degree in Electrical / Electronic Engineering, Materials Science, Physics or a related field.
Above 10 years of proven experience in compound semiconductor epitaxy process development / manufacturing (GaN or III-V preferred).
Knowledge of semiconductor processes (lithography, etch, etc.) and characterization techniques (SEM, TEM, XRD, etc.) is a plus.
Excellent communication, collaboration and self-motivation skills.
Avid technical reader, critical thinker, and team player.
Proficiency in data analysis and DOE tools (Excel, JMP, Origin, etc.) is beneficial.
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Lead Engineer • Queenstown, Otago, New Zealand